A review of defect engineering, ion implantation, and nanofabrication using the helium ion microscope

• Frances I. Allen

Beilstein J. Nanotechnol. 2021, 12, 633–664, doi:10.3762/bjnano.12.52

• 0.2–1.3%) and, within this dose range, measured a metal–insulator transition [19]. Raman analysis showed that even at the highest dose (i.e., for strongly insulating graphene), the crystal lattice structure of the graphene sheet was essentially preserved. A subsequent study by Moktadir et al

Relation between thickness, crystallite size and magnetoresistance of nanostructured La_1−xSr_xMn_yO_3±δ films for magnetic field sensors

• Rasuole Lukose,
• Valentina Plausinaitiene,
• Milita Vagner,
• Nerija Zurauskiene,
• Skirmantas Kersulis,
• Virgaudas Kubilius,
• Karolis Motiejuitis,
• Birute Knasiene,
• Voitech Stankevic,
• Zita Saltyte,
• Martynas Skapas,
• Algirdas Selskis and
• Evaldas Naujalis

Beilstein J. Nanotechnol. 2019, 10, 256–261, doi:10.3762/bjnano.10.24

• increase of the metal–insulator transition temperature (TMI) were observed with the increase of film thickness, crystallite dimensions and Sr content for both deposition series (Figure 3a and 3b). No significant difference in the TMI was observed for the I and II series (Figure 3b insert). However, higher

Large area scanning probe microscope in ultra-high vacuum demonstrated for electrostatic force measurements on high-voltage devices

• Urs Gysin,
• Thilo Glatzel,
• Thomas Schmölzer,
• Adolf Schöner,
• Sergey Reshanov,
• Holger Bartolf and
• Ernst Meyer

Beilstein J. Nanotechnol. 2015, 6, 2485–2497, doi:10.3762/bjnano.6.258

• and interfaces is given by T. Seyller [52]. The electronic structure of SiC surfaces suffers from a strong electron correlation induced by a Mott–Hubbard metal–insulator transition [53] due to a half-filled and hence metallic band arising from dangling bonds. More refined studies employed a 2D Hubbard

Focused electron beam induced deposition: A perspective

• Michael Huth,
• Fabrizio Porrati,
• Christian Schwalb,
• Marcel Winhold,
• Roland Sachser,
• Maja Dukic,
• Jonathan Adams and
• Georg Fantner

Beilstein J. Nanotechnol. 2012, 3, 597–619, doi:10.3762/bjnano.3.70

• structures provide in resolving long-standing issues in the physics of nanogranular metals close to the metal–insulator transition. The implications of the nanogranular microstructure, often obtained in FEBID, for sensor applications are subsequently presented. Nanogranular structures, i.e., structures that

Switching adhesion forces by crossing the metal–insulator transition in Magnéli-type vanadium oxide crystals

• Bert Stegemann,
• Matthias Klemm,
• Siegfried Horn and
• Mathias Woydt

Beilstein J. Nanotechnol. 2011, 2, 59–65, doi:10.3762/bjnano.2.8

• ; atomic force microscopy; Magnéli phases; metal–insulator transition; vanadium oxide; Introduction Thermally controlled metal–insulator transitions (MIT) are observed in a large number of crystalline and amorphous semiconductors. Particularly among the transition metal oxides, there are numerous

• metal–insulator transition (MIT) is the correlation of d band electrons of opposite spins as explained by the Mott–Hubbard model [3]. It was first recognized by Magnèli et al., that oxides of titanium and vanadium as well as those of molybdenum and tungsten form homologous series with planar faults of

• forces of Magnéli-type phases of vanadium oxide, acquired by means of force–distance measurements with a spherical AFM probe, show a distinct response to the temperature-induced metal–insulator transition. This behavior makes the vanadium Magnéli phases interesting candidates for technological